Bumili SIHD12N50E-GE3 sa BYCHPS
Bumili na may garantiya
SIHD12N50E-GE3
- Numero ng Bahagi:
- SIHD12N50E-GE3
- Manufacturer:
- Vishay / Siliconix
- Paglalarawan:
- MOSFET N-CHAN 500V DPAK
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 12460 Pieces
- Data sheet:
- SIHD12N50E-GE3.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa SIHD12N50E-GE3, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa SIHD12N50E-GE3 sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | D-PAK (TO-252AA) |
| serye: | E |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Power pagwawaldas (Max): | 114W (Tc) |
| packaging: | Cut Tape (CT) |
| Package / Kaso: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ibang pangalan: | SIHD12N50E-GE3CT SIHD12N50E-GE3CT-ND |
| operating Temperature: | -55°C ~ 150°C (TA) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Tagagawa Standard Lead Time: | 19 Weeks |
| Manufacturer Bilang Bahagi: | SIHD12N50E-GE3 |
| Input Kapasidad (Ciss) (Max) @ Vds: | 886pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Ang pinalawak Paglalarawan: | N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA) |
| Drive Boltahe (Max Rds On, Min Rds On): | 10V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 550V |
| paglalarawan: | MOSFET N-CHAN 500V DPAK |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 10.5A (Tc) |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa SIHD12N50E-GE3
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