Bumili GP1M010A080N sa BYCHPS
Bumili na may garantiya
GP1M010A080N
- Numero ng Bahagi:
- GP1M010A080N
- Manufacturer:
- Global Power Technologies Group
- Paglalarawan:
- MOSFET N-CH 900V 10A TO3PN
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 12098 Pieces
- Data sheet:
- GP1M010A080N.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa GP1M010A080N, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa GP1M010A080N sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | TO-3PN |
| serye: | - |
| Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 5A, 10V |
| Power pagwawaldas (Max): | 312W (Tc) |
| packaging: | Tape & Reel (TR) |
| Package / Kaso: | TO-3P-3, SC-65-3 |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Bilang Bahagi: | GP1M010A080N |
| Input Kapasidad (Ciss) (Max) @ Vds: | 2336pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Ang pinalawak Paglalarawan: | N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN |
| Alisan ng tubig sa Source Boltahe (Vdss): | 900V |
| paglalarawan: | MOSFET N-CH 900V 10A TO3PN |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 10A (Tc) |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa GP1M010A080N
| larawan | Numero ng Bahagi | Mga Tagagawa | Paglalarawan | Tingnan |
|---|---|---|---|---|
 |
GP1M010A080H | Global Power Technologies Group | MOSFET N-CH 800V 9.5A TO220 | Pagtatanong |
 |
GP1M016A025PG | Global Power Technologies Group | MOSFET N-CH 250V 16A IPAK | Pagtatanong |
|
GP1M015A050H | Global Power Technologies Group | MOSFET N-CH 500V 14A TO220 | Pagtatanong |
|
GP1M010A060H | Global Power Technologies Group | MOSFET N-CH 600V 10A TO220 | Pagtatanong |
 |
GP1M010A080FH | Global Power Technologies Group | MOSFET N-CH 800V 9.5A TO220F | Pagtatanong |
|
GP1M010A060FH | Global Power Technologies Group | MOSFET N-CH 600V 10A TO220F | Pagtatanong |
|
GP1M012A060FH | Global Power Technologies Group | MOSFET N-CH 600V 12A TO220F | Pagtatanong |
|
GP1M015A050FH | Global Power Technologies Group | MOSFET N-CH 500V 14A TO220F | Pagtatanong |
|
GP1M011A050FSH | Global Power Technologies Group | MOSFET N-CH 500V 10A TO220F | Pagtatanong |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers