Bumili SI3586DV-T1-GE3 sa BYCHPS
Bumili na may garantiya
SI3586DV-T1-GE3
- Numero ng Bahagi:
- SI3586DV-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Paglalarawan:
- MOSFET N/P-CH 20V 2.9A 6-TSOP
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 19589 Pieces
- Data sheet:
- SI3586DV-T1-GE3.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa SI3586DV-T1-GE3, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa SI3586DV-T1-GE3 sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 1.1V @ 250µA |
|---|---|
| Supplier aparato Package: | 6-TSOP |
| serye: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.4A, 4.5V |
| Power - Max: | 830mW |
| packaging: | Tape & Reel (TR) |
| Package / Kaso: | SOT-23-6 Thin, TSOT-23-6 |
| Ibang pangalan: | SI3586DV-T1-GE3TR SI3586DVT1GE3 |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Bilang Bahagi: | SI3586DV-T1-GE3 |
| Input Kapasidad (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
| Type FET: | N and P-Channel |
| FET Tampok: | Logic Level Gate |
| Ang pinalawak Paglalarawan: | Mosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP |
| Alisan ng tubig sa Source Boltahe (Vdss): | 20V |
| paglalarawan: | MOSFET N/P-CH 20V 2.9A 6-TSOP |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 2.9A, 2.1A |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa SI3586DV-T1-GE3
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