Bumili SIR662DP-T1-GE3 sa BYCHPS
Bumili na may garantiya
SIR662DP-T1-GE3
- Numero ng Bahagi:
- SIR662DP-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Paglalarawan:
- MOSFET N-CH 60V 60A PPAK SO-8
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 15275 Pieces
- Data sheet:
- 1.SIR662DP-T1-GE3.pdf2.SIR662DP-T1-GE3.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa SIR662DP-T1-GE3, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa SIR662DP-T1-GE3 sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | PowerPAK® SO-8 |
| serye: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 20A, 10V |
| Power pagwawaldas (Max): | 6.25W (Ta), 104W (Tc) |
| packaging: | Tape & Reel (TR) |
| Package / Kaso: | PowerPAK® SO-8 |
| Ibang pangalan: | SIR662DP SIR662DP-T1-GE3TR SIR662DPT1GE3 SIR662DPTR SIR662DPTR-ND |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Tagagawa Standard Lead Time: | 24 Weeks |
| Manufacturer Bilang Bahagi: | SIR662DP-T1-GE3 |
| Input Kapasidad (Ciss) (Max) @ Vds: | 4365pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Ang pinalawak Paglalarawan: | N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 |
| Drive Boltahe (Max Rds On, Min Rds On): | 4.5V, 10V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 60V |
| paglalarawan: | MOSFET N-CH 60V 60A PPAK SO-8 |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa SIR662DP-T1-GE3
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