Bumili SIR800DP-T1-GE3 sa BYCHPS
Bumili na may garantiya
SIR800DP-T1-GE3
- Numero ng Bahagi:
- SIR800DP-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Paglalarawan:
- MOSFET N-CH 20V 50A PPAK SO-8
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 12533 Pieces
- Data sheet:
- SIR800DP-T1-GE3.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa SIR800DP-T1-GE3, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa SIR800DP-T1-GE3 sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
|---|---|
| Vgs (Max): | ±12V |
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | PowerPAK® SO-8 |
| serye: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 15A, 10V |
| Power pagwawaldas (Max): | 5.2W (Ta), 69W (Tc) |
| packaging: | Tape & Reel (TR) |
| Package / Kaso: | PowerPAK® SO-8 |
| Ibang pangalan: | SIR800DP-T1-GE3TR SIR800DPT1GE3 |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Tagagawa Standard Lead Time: | 24 Weeks |
| Manufacturer Bilang Bahagi: | SIR800DP-T1-GE3 |
| Input Kapasidad (Ciss) (Max) @ Vds: | 5125pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 133nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Ang pinalawak Paglalarawan: | N-Channel 20V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8 |
| Drive Boltahe (Max Rds On, Min Rds On): | 2.5V, 10V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 20V |
| paglalarawan: | MOSFET N-CH 20V 50A PPAK SO-8 |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa SIR800DP-T1-GE3
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