Bumili SISS10DN-T1-GE3 sa BYCHPS
Bumili na may garantiya
SISS10DN-T1-GE3
- Numero ng Bahagi:
- SISS10DN-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Paglalarawan:
- MOSFET N-CH 40V 60A PPAK 1212-8S
- Lead Free Status / Katayuan ng RoHS:
- Lead libreng / RoHS compliant
- Magagamit na Dami:
- 13424 Pieces
- Data sheet:
- SISS10DN-T1-GE3.pdf
pagpapakilala
BYCHIPS ay ang stocking distributor para sa SISS10DN-T1-GE3, mayroon kaming mga stock para sa agarang pagpapadala at magagamit din para sa mahabang panahon supply. Mangyaring ipadala sa amin ang iyong plano sa pagbili para sa SISS10DN-T1-GE3 sa pamamagitan ng email, bibigyan ka namin ng pinakamahusay na presyo ayon sa iyong plano.
Mga pagtutukoy
| Vgs (th) (Max) @ Id: | 2.4V @ 250µA |
|---|---|
| Vgs (Max): | +20V, -16V |
| teknolohiya: | MOSFET (Metal Oxide) |
| Supplier aparato Package: | PowerPAK® 1212-8S (3.3x3.3) |
| serye: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.65 mOhm @ 15A, 10V |
| Power pagwawaldas (Max): | 57W (Tc) |
| packaging: | Tape & Reel (TR) |
| Package / Kaso: | 8-PowerVDFN |
| Ibang pangalan: | SISS10DN-T1-GE3TR |
| operating Temperature: | -55°C ~ 150°C (TJ) |
| Salalayan Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Tagagawa Standard Lead Time: | 19 Weeks |
| Manufacturer Bilang Bahagi: | SISS10DN-T1-GE3 |
| Input Kapasidad (Ciss) (Max) @ Vds: | 3750pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Type FET: | N-Channel |
| FET Tampok: | - |
| Ang pinalawak Paglalarawan: | N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3) |
| Drive Boltahe (Max Rds On, Min Rds On): | 4.5V, 10V |
| Alisan ng tubig sa Source Boltahe (Vdss): | 40V |
| paglalarawan: | MOSFET N-CH 40V 60A PPAK 1212-8S |
| Current - Ang patuloy Drain (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
Mga Kaugnay na bahagi para sa SISS10DN-T1-GE3
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