Bumili UNR411F00A sa BYCHPS
Bumili na may garantiya
Boltahe - Kolektor Emitter Breakdown (Max): | 50V |
---|---|
Vce Saturation (Max) @ Ib, IC: | 250mV @ 300µA, 10mA |
Type transistor: | PNP - Pre-Biased |
Supplier aparato Package: | NS-B1 |
serye: | - |
Resistor - Emitter Base (R2) (Ohms): | 10k |
Resistor - Base (R1) (Ohms): | 4.7k |
Power - Max: | 300mW |
packaging: | Cut Tape (CT) |
Package / Kaso: | NS-B1 |
Ibang pangalan: | UNR411F00ACT |
Salalayan Type: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Bilang Bahagi: | UNR411F00A |
Frequency - Transition: | 80MHz |
Ang pinalawak Paglalarawan: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 300mW Through Hole NS-B1 |
paglalarawan: | TRANS PREBIAS PNP 300MW NS-B1 |
DC Kasalukuyang Gain (HFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Current - Kolektor Cutoff (Max): | 500nA |
Current - kolektor (Ic) (Max): | 100mA |
Email: | [email protected] |